Title :
Optical properties of GaAsP NEA cold cathodes
Author :
Hockley, Peter J. ; Thomas, Hugh
Author_Institution :
Sch. of Electr., Electron. & Syst. Eng., Univ. of Wales, Coll. of Cardiff, UK
fDate :
7/1/1992 12:00:00 AM
Abstract :
Photovoltage and photoemission experiments have shown that the GaAsP cold cathode negative electron affinity condition was inhibited by a surface defect state. Operationally, the NEA condition was further restricted by cesium coating of nonsemiconductor surfaces resulting in a reduction of band bending at the p surface, unless a negative potential of 50-70 V was applied to the cathode
Keywords :
III-V semiconductors; electron field emission; gallium arsenide; p-n junctions; photocathodes; photoemission; photovoltaic effects; semiconductor diodes; vacuum microelectronics; CS-GaAsP:Zn; Cs evaporation; LED; NEA condition; Zn diffusion; cold cathodes; negative electron affinity; optical properties; photoemission experiments; photovoltage experiments; solid state emitter; surface defect state; vacuum microelectronics; Cathodes; Electron beams; Electron emission; Electron optics; Fault location; Light emitting diodes; Optical surface waves; Photoelectricity; Sputtering; Surface discharges;
Journal_Title :
Electron Devices, IEEE Transactions on
