DocumentCode
756188
Title
Simple equations for the electrostatic potential in buried-channel MOS devices
Author
Yin, Yiwen ; Cooper, James A., Jr.
Author_Institution
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
39
Issue
7
fYear
1992
fDate
7/1/1992 12:00:00 AM
Firstpage
1770
Lastpage
1772
Abstract
Simple equations are presented for the potential in a buried-channel MOS device as a function of channel charge. If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to numerical solutions, and good agreement is found
Keywords
electrostatics; metal-insulator-semiconductor devices; semiconductor device models; buried-channel MOS devices; channel charge; electrostatic potential; oxide thickness; Avalanche breakdown; Electric breakdown; Electron devices; Electrostatics; Equations; Erbium; MOS devices; Semiconductor diodes; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.141247
Filename
141247
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