Title :
Improved drift in two-phase, long-channel, shallow buried-channel CCDs with longitudinally nonuniform storage-gate implants
Author :
Lattes, A.L. ; Munroe, S.C. ; Seaver, M.M. ; Murguia, J.E. ; Melngailis, J.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
Two-phase buried-channel charge-coupled devices (CCDs) with a gradient in the storage wells, generated by a nonuniform channel doping parallel to the surface, were studied at room temperature and at 77 K. The built-in drift fields improve the charge transfer efficiency by more than an order of magnitude, consistently with two-dimensional simulations
Keywords :
charge-coupled device circuits; charge-coupled devices; ion implantation; semiconductor device models; simulation; 77 K; built-in drift fields; buried channel CCD; channel doping; charge transfer efficiency; charge-coupled devices; long-channel; longitudinally nonuniform storage-gate implants; modelling; shallow buried-channel; two-dimensional simulations; two-phase; Charge coupled devices; Charge transfer; Clocks; Computer science; Doping; Electrons; Implants; Laboratories; Potential well; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
