Title :
Effect of traps on the response of a photoexcited GaAs MESFET
Author :
Srinivas, Vivek ; Chen, Jui Y. ; Buchner, Steve
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., Baltimore, MD, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
Photoinjected carriers were found to cause modulation of the drain-source current of a MESFET biased in the active region. The observed tail in the temporal response is attributed to the modulation of the channel by trapped charges
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; hole traps; semiconductor device models; GaAs; MESFET; channel current modulation; drain-source current; photoexcited device; photoinjected carriers; temporal response; trapped charges; Charge carrier processes; Current measurement; Electron traps; Gallium arsenide; Intensity modulation; MESFETs; Optical modulation; Particle beam optics; Photodetectors; Space technology;
Journal_Title :
Electron Devices, IEEE Transactions on
