A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

Author

Meixner, Ronald M. ; Göbel, Holger H. ; Qiu, Haidi ; Ucurum, Cihan ; Klix, Wilfried ; Stenzel, Roland ; Yildirim, Faruk Altan ; Bauhofer, Wolfgang ; Krautschneider, Wolfgang H.

Author_Institution

Fed. Armed Forces, Rostock

Volume

55

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1776

Lastpage

1781

Abstract

A PSPICE model for organic thin-film transistors (OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs.

Keywords

MOSFET; SPICE; carrier mobility; polymers; semiconductor device models; thin film transistors; bulk conductivity; charge carrier mobility; physical-based PSPICE compact model; poly(3-hexylthiophene) organic thin-film field-effect transistors; poly(3-hexylthiophene-2,5-diyl); standard MOSFET Berkeley short-channel IGFET model equations; voltage-controlled current; Charge carrier mobility; Circuit simulation; Equations; MOSFET circuits; OFETs; Organic thin film transistors; SPICE; Silicon; Thin film transistors; Voltage; Compact model; SPICE; organic thin-film transistors (OFETs); poly(3-hexylthiophene) (P3HT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.925339

Filename

4545045