On the performance of low-noise low-DC-power-consumption cryogenic amplifiers

Author

Angelov, I. ; Wadefalk, N. ; Stenarson, Jörgen ; Kollberg, Erik Ludvig ; Starski, Piotr ; Zirath, Herbert

Author_Institution

Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

50

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1480

Lastpage

1486

Abstract

The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design, which helps in minimizing the power consumption and optimizing the performance of the amplifier. A noise temperature below 9 K and 22-dB gain was experimentally obtained in the frequency range of 4-8 GHz with a total power consumption of 4 mW with commercial GaAs transistors

Keywords

circuit noise; cryogenic electronics; low-power electronics; microwave amplifiers; wideband amplifiers; 22 dB; 4 mW; 4 to 8 GHz; DC power consumption; GaAs; GaAs transistor; broadband low-noise cryogenic amplifier; noise temperature; Cryogenics; Energy consumption; Gallium arsenide; Indium phosphide; Low-noise amplifiers; Microwave FETs; Microwave technology; Microwave transistors; Space technology; Transconductance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.1006408

Filename

1006408