Title :
A simple and analytical parameter-extraction method of a microwave MOSFET
Author :
Kwon, Ickjin ; Je, Minkyu ; Lee, Kwyro ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
6/1/2002 12:00:00 AM
Abstract :
A simple and accurate parameter-extraction method of a high-frequency small-signal MOSFET model including the substrate-related parameters and nonreciprocal capacitors is proposed. Direct extraction of each parameter using a linear regression approach is performed by Y-parameter analysis on the proposed equivalent circuit of the MOSFET for high-frequency operation. The extracted results are physically meaningful and good agreement has been obtained between the simulation results of the equivalent circuit and measured data without any optimization. Also, the extracted parameters, such as gm and gds, match very well with those obtained by DC measurement
Keywords :
MOSFET; equivalent circuits; microwave field effect transistors; semiconductor device models; HF small-signal MOSFET model; Y-parameter analysis; direct extraction; linear regression approach; microwave MOSFET; nonreciprocal capacitors; parameter-extraction method; small-signal equivalent circuit; substrate-related parameters; Capacitance; Capacitors; Data mining; Equivalent circuits; MOSFET circuits; Microwave theory and techniques; Object oriented modeling; Parameter extraction; Semiconductor device modeling; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.1006411
