A simple and analytical parameter-extraction method of a microwave MOSFET

Author

Kwon, Ickjin ; Je, Minkyu ; Lee, Kwyro ; Shin, Hyungcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

50

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1503

Lastpage

1509

Abstract

A simple and accurate parameter-extraction method of a high-frequency small-signal MOSFET model including the substrate-related parameters and nonreciprocal capacitors is proposed. Direct extraction of each parameter using a linear regression approach is performed by Y-parameter analysis on the proposed equivalent circuit of the MOSFET for high-frequency operation. The extracted results are physically meaningful and good agreement has been obtained between the simulation results of the equivalent circuit and measured data without any optimization. Also, the extracted parameters, such as g_m and g_ds, match very well with those obtained by DC measurement

Keywords

MOSFET; equivalent circuits; microwave field effect transistors; semiconductor device models; HF small-signal MOSFET model; Y-parameter analysis; direct extraction; linear regression approach; microwave MOSFET; nonreciprocal capacitors; parameter-extraction method; small-signal equivalent circuit; substrate-related parameters; Capacitance; Capacitors; Data mining; Equivalent circuits; MOSFET circuits; Microwave theory and techniques; Object oriented modeling; Parameter extraction; Semiconductor device modeling; Substrates;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.1006411

Filename

1006411