Thermal modeling and measurement of GaN-based HFET devices

Author

Park, Jeong ; Shin, Moo Whan ; Lee, Chin C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Irvine, CA, USA

Volume

24

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

424

Lastpage

426

Abstract

In this letter, we present our thermal study results of GaN-based heterojunction field effect transistors (HFETs). In thermal computation, PAMICE code was used to calculate temperatures in a three-dimension (3-D) model. In the thermal measurement, nematic liquid crystal thermography was employed to determine the peak temperature on the surface of the device chip. The calculated and directly measured temperatures agree well. These methods are valuable in predicting the thermal performance of GaN-based HFET devices, in particular the power devices.

Keywords

III-V semiconductors; gallium compounds; junction gate field effect transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; temperature measurement; thermal analysis; wide band gap semiconductors; GaN; GaN heterojunction field effect transistor; PAMICE code; nematic liquid crystal thermography; power device; surface temperature; thermal measurement; thermal model; three-dimensional simulation; FETs; Gallium nitride; HEMTs; Heterojunctions; Liquid crystal devices; Liquid crystals; MODFETs; Semiconductor device measurement; Temperature measurement; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.814020

Filename

1217285