Title :
Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA
Author :
Hafez, W. ; Jie-Wei Lai ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
7/1/2003 12:00:00 AM
Abstract :
Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm×2 μm devices yielded excellent low-current RF performance, with an fT=173 GHz and an fmax=187 GHz at 1 mA, the highest values reported for InP-based devices to date.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; mixed analogue-digital integrated circuits; 0.5 micron; 1 mA; 173 GHz; 187 GHz; InP-InGaAs; low-power high-speed operation; mixed-signal RF circuit; submicron InP-InGaAs SHBT; Bipolar integrated circuits; Bipolar transistors; Breakdown voltage; Extrapolation; Heterojunction bipolar transistors; High speed integrated circuits; Radio frequency; Scanning electron microscopy; Silicon germanium; Thermal management;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.814008
