DocumentCode :
756698
Title :
Wideband DHBTs using a graded carbon-doped InGaAs base
Author :
Dahlstrom, M. ; Fang, X.-M. ; Lubyshev, D. ; Urteaga, M. ; Krishnan, S. ; Parthasarathy, N. ; Kim, Y.M. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
24
Issue :
7
fYear :
2003
fDate :
7/1/2003 12:00:00 AM
Firstpage :
433
Lastpage :
435
Abstract :
We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz f/sub /spl tau// and 400 GHz fmax. The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8/spl middot/10/sup 19//cm3 to 5/spl middot/10/sup 19//cm3, an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 /spl Omega/) and contact (<10 /spl Omega/-μm2) resistivities are in part responsible for the high fmax observed.
Keywords :
III-V semiconductors; carbon; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; 282 GHz; 400 GHz; InGaAs/InAlAs base-collector superlattice grade; InP collector; InP-InGaAs:C-InP; InP/InGaAs/InP double heterojunction bipolar transistor; contact resistance; depletion layer; graded carbon-doped InGaAs base; mesa structure; sheet resistance; wideband DHBT; Capacitance; Conductivity; Doping; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Superlattices; Wideband;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2003.815009
Filename :
1217288
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=756698
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