Wideband DHBTs using a graded carbon-doped InGaAs base

Author

Dahlstrom, M. ; Fang, X.-M. ; Lubyshev, D. ; Urteaga, M. ; Krishnan, S. ; Parthasarathy, N. ; Kim, Y.M. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

24

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

433

Lastpage

435

Abstract

We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz f/sub /spl tau// and 400 GHz f_max. The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8/spl middot/10/sup 19//cm³ to 5/spl middot/10/sup 19//cm³, an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 /spl Omega/) and contact (<10 /spl Omega/-μm²) resistivities are in part responsible for the high f_max observed.

Keywords

III-V semiconductors; carbon; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; 282 GHz; 400 GHz; InGaAs/InAlAs base-collector superlattice grade; InP collector; InP-InGaAs:C-InP; InP/InGaAs/InP double heterojunction bipolar transistor; contact resistance; depletion layer; graded carbon-doped InGaAs base; mesa structure; sheet resistance; wideband DHBT; Capacitance; Conductivity; Doping; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Superlattices; Wideband;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.815009

Filename

1217288