Title :
Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz
Author :
Hafez, W. ; Jie-Wei Lai ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
7/1/2003 12:00:00 AM
Abstract :
Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25×16 μm2 transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies fT of 452 GHz. The devices operate at current densities above 1000 kA/cm2 and have BV/sub CEO/ breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor epitaxial layers; 0.25 micron; 2.1 V; 452 GHz; InP-InGaAs; InP/InGaAs single heterojunction bipolar transistor; RF parameters; breakdown voltage; current density; current gain cut-off frequency; delay parameters; epitaxial structure; high-frequency characteristics; submicron vertical scaling; Bipolar transistors; Current density; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Parasitic capacitance; Planarization; Radio frequency; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.814990
