Title :
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
Author :
Sun Jung Kim ; Byung Jin Cho ; Ming-Fu Li ; Chunxiang Zhu ; Chin, A. ; Dim-Lee Kwong
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
7/1/2003 12:00:00 AM
Abstract :
A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.
Keywords :
MIM devices; capacitors; dielectric thin films; hafnium compounds; leakage currents; sputtered coatings; terbium; HfO/sub 2/:Tb; RF bypass capacitor; Tb-doped HfO/sub 2/ dielectric film; capacitance density; cosputtering; high-K material; high-density MIM capacitor; leakage current density; physical vapor deposition; voltage coefficient of capacitance; Atherosclerosis; Capacitance; Chemical vapor deposition; Dielectrics; Hafnium oxide; Leakage current; MIM capacitors; Metal-insulator structures; Radio frequency; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.814024
