Title :
Amorphous silicon TFT-based active-matrix organic polymer LEDs
Author :
Kim, Joo-Han ; Hong, Yongtaek ; Kanicki, Jerzy
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fDate :
7/1/2003 12:00:00 AM
Abstract :
We report active-matrix organic polymer light-emitting displays (LEDs) based on a three hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel electrode circuit that supplies a continuous output current to organic polymer light-emitting devices. The output current level drift induced by either process variations or device aging can be reduced in this design by adjusting the driver TFT operating point with the active resistor. Our first green light-emitting engineering prototype had a brightness of 120 cd/m/sup 2/ and fill factor of about 45%.
Keywords :
LED displays; ageing; amorphous semiconductors; elemental semiconductors; flat panel displays; hydrogen; optical polymers; silicon; thin film transistors; Si:H; active resistor; active-matrix organic polymer light-emitting display; brightness; current drift; device aging; fill factor; flat panel display; green light emission; hydrogenated amorphous silicon thin-film transistor pixel electrode circuit; Active matrix technology; Aging; Amorphous silicon; Displays; Driver circuits; Electrodes; Light emitting diodes; Organic light emitting diodes; Resistors; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.814999
