DocumentCode :
756793
Title :
Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x
Author :
Jongwan Jung ; Lee, M.L. ; Shaofeng Yu ; Fitzgerald, E.A. ; Antoniadis, D.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
24
Issue :
7
fYear :
2003
fDate :
7/1/2003 12:00:00 AM
Firstpage :
460
Lastpage :
462
Abstract :
High-hole and electron mobility in complementary channels in strained silicon (Si) on top of strained Si/sub 0.4/Ge/sub 0.6/, both grown on a relaxed Si/sub 0.7/Ge/sub 0.3/ virtual substrate is shown for the first time. The buried Si/sub 0.4/Ge/sub 0.6/ serves as a high-mobility p-channel, and the strained-Si cap serves as a high-mobility n-channel. The effective mobility, measured in devices with a 20-μm gate length and 3.8-nm gate oxide, shows about 2.2/spl sim/2.5 and 2.0 times enhancement in hole and electron mobility, respectively, across a wide vertical field range. In addition, it is found that as the Si cap thickness decreased, PMOS transistors exhibited increased mobility especially at medium- and high-hole density in this heterostructure.
Keywords :
Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; hole mobility; semiconductor materials; silicon; 20 micron; 3.8 nm; PMOS transistors; Si-Si/sub 0.4/Ge/sub 0.6/-Si/sub 0.7/Ge/sub 0.3/; cap thickness; complementary channels; electron mobility; gate length; high-hole mobility; vertical field range; virtual substrate; Capacitive sensors; Charge carrier processes; DH-HEMTs; Electron mobility; Germanium silicon alloys; Length measurement; MOS devices; MOSFETs; Silicon germanium; Vacuum systems;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2003.814028
Filename :
1217297
Link To Document :
