• DocumentCode
    756928
  • Title

    Ka-band high efficiency power amplifier MMIC with 0.30 μm MESFET for high volume applications

  • Author

    Mondal, Jayant ; Geddes, J. ; Carlson, Darren ; Vickberg, M. ; Bounnak, S. ; Anderson, C.

  • Author_Institution
    SRC Honeywell, Bloomington, MN
  • Volume
    40
  • Issue
    3
  • fYear
    1992
  • fDate
    3/1/1992 12:00:00 AM
  • Firstpage
    563
  • Lastpage
    566
  • Abstract
    A single-ended three-stage MESFET power amplifier designed for high-volume, low-cost applications shows an average of 15-21% power added efficiency in Ka-band with 100-150 mW of power output over 30-35 GHz. Δ<S21 with power saturation, an important parameter in phased array applications, is also reported. Efficiencies as high as 28% were measured on good wafers with high on-wafer repeatability under power drive
  • Keywords
    MMIC; Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; power amplifiers; 0.3 micron; 100 to 150 mW; 15 to 28 percent; 30 to 35 GHz; Ka-band; MESFET; MMIC; high volume applications; low-cost applications; monolithic microwave IC; phased array applications; power added efficiency; power amplifier; single-ended three-stage; Doping; Etching; Fingers; High power amplifiers; MESFETs; MMICs; Optical amplifiers; Optical transmitters; Phased arrays; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.121733
  • Filename
    121733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=756928