Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs

Author

Feng, M. ; Scherrer, D.R. ; Apostolakis, P.J. ; Middleton, J.R. ; McPartlin, M.J. ; Lautenvasser, B.D. ; Oliver, J.D., Jr.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

5

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

156

Lastpage

158

Abstract

Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFETs with 0.25 μm "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz. These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date.

Keywords

MESFET integrated circuits; MMIC amplifiers; field effect MIMIC; field effect MMIC; integrated circuit noise; ion implantation; millimetre wave amplifiers; 2 to 3 dB; 27 to 34 GHz; 30 dB; EHF; GaAs; Ka-band; MIMIC; SHF; T-gate MESFET; direct ion-implanted MESFETs; five stage MMIC amplifier; low cost ion implantation techniques; low-noise amplifier; monolithic LNA; single power supply; Costs; Gain; Gallium arsenide; Ion implantation; Low-noise amplifiers; MESFETs; MMICs; Noise figure; Power amplifiers; Power supplies;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.374083

Filename

374083