DocumentCode
75719
Title
An Adaptive Integration Time CMOS Image Sensor With Multiple Readout Channels
Author
Xinyuan Qian ; Hang Yu ; Shoushun Chen ; Kay Soon Low
Author_Institution
VIRTUS IC Design Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
Volume
13
Issue
12
fYear
2013
fDate
Dec. 2013
Firstpage
4931
Lastpage
4939
Abstract
In this paper, we present an adaptive integration time CMOS image sensor with multiple readout channels for star tracker application. The sensor architecture allows each pixel to have an adaptive integration time. Through cyclically selecting a row of pixels and checking the integration voltage of each pixel, brighter pixels can be marked and readout first. Those dimmer pixels will continue integration until their voltage fall into a window defined by two threshold voltages. Each pixel only consists of five transistors. To improve the readout throughput and hence to reduce the rolling time, a multiple readout channel architecture is proposed. A proof-of-concept 320 × 128-pixel image sensor was implemented using Global Foundries 0.18 μm mixed-signal CMOS process.
Keywords
CMOS image sensors; star trackers; CMOS image sensor; Global Foundries mixed-signal CMOS process; adaptive integration time; multiple readout channels; size 0.18 mum; star tracker application; Arrays; CMOS image sensors; Capacitors; Dynamic range; Photoconductivity; Simulation; Threshold voltage; CMOS image sensor; adaptive integration time; high dynamic range (HDR); multiple readout channels; star tracker; wide dynamic range (WDR);
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2013.2277516
Filename
6576179
Link To Document