• DocumentCode
    75719
  • Title

    An Adaptive Integration Time CMOS Image Sensor With Multiple Readout Channels

  • Author

    Xinyuan Qian ; Hang Yu ; Shoushun Chen ; Kay Soon Low

  • Author_Institution
    VIRTUS IC Design Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    13
  • Issue
    12
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    4931
  • Lastpage
    4939
  • Abstract
    In this paper, we present an adaptive integration time CMOS image sensor with multiple readout channels for star tracker application. The sensor architecture allows each pixel to have an adaptive integration time. Through cyclically selecting a row of pixels and checking the integration voltage of each pixel, brighter pixels can be marked and readout first. Those dimmer pixels will continue integration until their voltage fall into a window defined by two threshold voltages. Each pixel only consists of five transistors. To improve the readout throughput and hence to reduce the rolling time, a multiple readout channel architecture is proposed. A proof-of-concept 320 × 128-pixel image sensor was implemented using Global Foundries 0.18 μm mixed-signal CMOS process.
  • Keywords
    CMOS image sensors; star trackers; CMOS image sensor; Global Foundries mixed-signal CMOS process; adaptive integration time; multiple readout channels; size 0.18 mum; star tracker application; Arrays; CMOS image sensors; Capacitors; Dynamic range; Photoconductivity; Simulation; Threshold voltage; CMOS image sensor; adaptive integration time; high dynamic range (HDR); multiple readout channels; star tracker; wide dynamic range (WDR);
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2013.2277516
  • Filename
    6576179