High Speed 1.55 μm InAs/InGaAlAs/InP Quantum Dot Lasers

Author

Gready, D. ; Eisenstein, Gadi ; Ivanov, V. ; Gilfert, Christian ; Schnabel, F. ; Rippien, A. ; Reithmaier, J.P. ; Bornholdt, Carsten

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel

Volume

26

Issue

1

fYear

2014

fDate

Jan.1, 2014

Firstpage

11

Lastpage

13

Abstract

We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 μm. The gain section was optimized for a high speed operation using a unique spatially resolved model. The measured modulation capability dependence on structural parameters (barrier width and the number of QD layers) is consistent with the model predictions. Short cavity lasers with a modal gain of more than 10 cm^-1 per dot layer exhibit a small signal modulation bandwidth above 9 GHz and large signal modulation at up to 22 Gb/s with an on/off ratio of 3 dB.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; optical modulation; quantum dot lasers; InAs-InGaAlAs-InP; gain section; modal gain; modulation capability; optical modulation; quantum dot lasers; short cavity lasers; wavelength 1.55 mum; Gain; Laser modes; Laser theory; Measurement by laser beam; Modulation; Quantum dot lasers; Quantum dots; optoelectronic devices; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2287502

Filename

6651670