Title :
Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes
Author :
Guo, Xiangyi ; Rowland, Larry B. ; Dunne, Greg T. ; Fronheiser, Jody A. ; Sandvik, Peter M. ; Beck, Ariane L. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
We report ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved. A gain higher than 1000 was demonstrated without edge breakdown.
Keywords :
avalanche photodiodes; hydrogen; silicon compounds; ultraviolet spectra; wide band gap semiconductors; 278 nm; 4H-SiC avalanche photodiodes; SiC:H; external quantum efficiency; ultraviolet separate absorption; ultraviolet separate multiplication; unity gain; Avalanche photodiodes; Doping; Electric breakdown; Electromagnetic wave absorption; Epitaxial layers; Impact ionization; Infrared spectra; Mass spectroscopy; Silicon carbide; Substrates; Avalanche photodiodes (APDs); silicon carbide (SiC); ultraviolet (UV);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.860384
