Sputtered Deposited Carbon–Indium–Zinc Oxide Channel Layers for Use in Thin-Film Transistors

Author

Parthiban, Sujeeth ; Soo-Hyun Kim ; Jang-Yeon Kwon

Author_Institution

Sch. of Integrated Technol., Yonsei Univ., Incheon, South Korea

Volume

35

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

1028

Lastpage

1030

Abstract

We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al₂O₃ substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm²/V · s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 10⁷. Moreover, the a-CIZO TFTs showed with a good bias stability.

Keywords

alumina; annealing; atomic layer deposition; carbon compounds; indium compounds; sputter deposition; thin film transistors; zinc compounds; Al₂O₃; CInZnO; ON-OFF current ratio; a-CIZO TFT postannealing; active-channel layer; atomic layer deposition grown substrates; bias stability; saturation field effect mobility; sputtered deposited channel layers; subthreshold swing; temperature 250 degC; temperature 293 K to 298 K; thin-film transistors; threshold voltage; voltage 11.2 V; Annealing; Bonding; Logic gates; Stress; Thermal stability; Thin film transistors; Thin-film transistor (TFT); dielectric; metal oxide; sputtering;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2345740

Filename

6902754