Title :
All-Optical XOR Gate Using Single Quantum-Dot SOA and Optical Filter
Author :
Dimitriadou, Evangelia ; Zoiros, K.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Democritus Univ. of Thrace, Xanthi, Greece
Abstract :
In this paper, we propose to implement an all-optical XOR gate for 160 Gb/s return-to-zero data signals using a single quantum-dot semiconductor optical amplifier (QD-SOA) assisted by a detuned optical filter (OF). These two elements are connected in series in a probe-dual pump configuration. By conducting numerical simulations, we thoroughly investigate and assess the impact of the critical performance parameters on the Q2-factor. The analysis of the obtained results against this metric enables us to specify the data signals peak power, QD-SOA small signal gain, current density, electron relaxation time from the excited state to the ground state and linewidth enhancement factor, and OF detuning, bandwidth and shape, for which the XOR logic is executed at the target data format and rate both with logical correctness and high quality. The confirmation of its design feasibility combined with its simplicity and ultrafast capability makes the XOR gate scheme promising for exploitation in all-optical signal processing and switching applications.
Keywords :
current density; excited states; ground states; optical filters; optical logic; optical pumping; semiconductor optical amplifiers; semiconductor quantum dots; Q2-factor; all-optical XOR gate; all-optical signal processing; bit rate 160 Gbit/s; current density; electron relaxation time; excited state; ground state; linewidth enhancement factor; optical filter; probe-dual pump configuration; return-to-zero data signals; single quantum-dot semiconductor optical amplifier; small signal gain; Bandwidth; Current density; Logic gates; Modulation; Optical filters; Probes; Semiconductor optical amplifiers; All-optical XOR gate; optical filtering; quantum-dot semiconductor optical amplifier (QD-SOA);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2013.2287905