Title :
Engineering of InGaAsP layer structures for low divergent long wavelength lasers
Author :
Corbett, B. ; Kearney, I. ; Lambkin, F. ; Justice, J. ; Buckley, U. ; Thomas, K.
Author_Institution :
NMRC, Univ. Coll. Cork, Ireland
fDate :
5/23/2002 12:00:00 AM
Abstract :
The epitaxial layers of an lnGaAsP laser structure have been engineered to obtain a transverse mode size of 3.1 μm and a FWHM transverse divergence to 22° while still retaining single mode operation. Ridge lasers based on this structure demonstrate 32% butt coupling efficiency to single mode fibre
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ridge waveguides; semiconductor epitaxial layers; semiconductor lasers; 3.1 micron; FWHM transverse divergence; InGaAsP; InGaAsP layer structures; MOVPE; butt coupling efficiency; epitaxial layers; full width half maximum divergence; low divergent long wavelength lasers; ridge lasers; single mode operation; transverse mode size; waveguide engineering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020369
