Title :
Dynamic exclusive-OR gate based on gate-induced Si island single-electron transistor
Author :
Kim, Dae Hwan ; Kim, Kyung Rok ; Sung, Suk-Kang ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
5/23/2002 12:00:00 AM
Abstract :
Basic operation of a dynamic exclusive-OR gate implemented by a field effect transistor and a single-electron transistor is experimentally demonstrated, for the first time. Logic output voltage shows full swing operation at a supply voltage of 20 mV. Fabricated single-electron transistors are advantageous for implementing a multi-gate single-electron logic circuit
Keywords :
MOSFET; logic gates; single electron transistors; 20 mV; MOSFET; SET; dynamic XOR gate; dynamic exclusive-OR gate; field effect transistor; full swing operation; gate-induced Si island single-electron transistor; logic output voltage; multi-gate single-electron logic circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020345
