DocumentCode :
757565
Title :
Enhanced intersubband absorption in stepped double barrier quantum wells
Author :
Lai, K.T. ; Haywood, S.K. ; Gupta, R. ; Missous, M.
Author_Institution :
Dept. of Eng., Hull Univ., UK
Volume :
38
Issue :
11
fYear :
2002
fDate :
5/23/2002 12:00:00 AM
Firstpage :
529
Lastpage :
530
Abstract :
Intersubband absorption is measured in the conduction band of GaAs and stepped GaAs/InxGa1-xAs multiple-quantum-wells confined by narrow AlAs barriers. Enhanced absorption from n=1 to n=2 is observed in the stepped wells. This is attributed to relaxation of the intersubband polarisation selection rule
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; indium compounds; infrared spectra; quantum wells; semiconductor quantum wells; FTIR absorption spectrum; GaAs; GaAs-InxGa1-xAs; GaAs-InGaAs; conduction band; enhanced intersubband absorption; intersubband polarisation selection rule; multiple-quantum-wells; narrow AlAs barriers; stepped double barrier quantum wells;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020261
Filename :
1006801
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=757565
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