Title :
Well-driven floating gate transistors
Author :
Mondragón-Torres, A.F. ; Schneider, M.C. ; Sanchez-Sinencio, Edgar
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
fDate :
5/23/2002 12:00:00 AM
Abstract :
A new layout structure for floating gate MOS devices on top of an isolating n-well is proposed. The well provides the floating device with noise isolation from the substrate and can also be used as an additional input for threshold voltage control or signal modulation
Keywords :
MOSFET; MI-FGMOS transistor; MOSFET; floating gate MOS devices; isolating n-well; layout structure; noise isolation; signal modulation; threshold voltage control; well-driven floating gate transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020360
