Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the $\\hbox {Pt/LaF}_{3}$ Interface

Author

Filippov, Vladimir I. ; Vasiliev, Alexey A. ; Moritz, Werner ; Szeponik, Jan

Author_Institution

Inst. of Molecular Phys., Russian Res. Center Kurchatov Inst., Moscow

Volume

6

Issue

5

fYear

2006

Firstpage

1250

Lastpage

1255

Abstract

An LaF₃ layer was shown to improve the characteristics of field-effect gas sensors for room-temperature hydrogen monitoring. The Pt/LaF₃ interface leads to a Nernst-type response and a detection limit of 10-ppm hydrogen in atmospheric air. The response time was shown to be about 110 s and was independent of hydrogen concentration. A method for the stabilization of a long-term behavior of the sensor was successfully demonstrated. The mechanism of the sensor´s response to hydrogen was shown to be different from that of the metal/insulator/semiconductor (MIS)-type sensors

Keywords

MIS structures; field effect devices; gas sensors; hydrogen; sensitivity; MIS structure; Pt-LaF₃; field-effect gas sensors; hydrogen sensitivity; room temperature hydrogen monitoring; Biosensors; Capacitive sensors; Electrodes; Gas detectors; Gas insulation; Hydrogen; Metal-insulator structures; Temperature distribution; Temperature sensors; Threshold voltage; Hydrogen sensor; metal/insulator/semiconductor (MIS) structure; room-temperature measurement; solid electrolyte;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2006.881088

Filename

1703486

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the Interface

Filippov, Vladimir I. ; Vasiliev, Alexey A. ; Moritz, Werner ; Szeponik, Jan

jour

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the $\\hbox {Pt/LaF}_{3}$ Interface