DocumentCode :
757663
Title :
Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the 
Interface
InterfaceAuthor :
Filippov, Vladimir I. ; Vasiliev, Alexey A. ; Moritz, Werner ; Szeponik, Jan
Author_Institution :
Inst. of Molecular Phys., Russian Res. Center Kurchatov Inst., Moscow
Volume :
6
Issue :
5
fYear :
2006
Firstpage :
1250
Lastpage :
1255
Abstract :
An LaF3 layer was shown to improve the characteristics of field-effect gas sensors for room-temperature hydrogen monitoring. The Pt/LaF3 interface leads to a Nernst-type response and a detection limit of 10-ppm hydrogen in atmospheric air. The response time was shown to be about 110 s and was independent of hydrogen concentration. A method for the stabilization of a long-term behavior of the sensor was successfully demonstrated. The mechanism of the sensor´s response to hydrogen was shown to be different from that of the metal/insulator/semiconductor (MIS)-type sensors
Keywords :
MIS structures; field effect devices; gas sensors; hydrogen; sensitivity; MIS structure; Pt-LaF3; field-effect gas sensors; hydrogen sensitivity; room temperature hydrogen monitoring; Biosensors; Capacitive sensors; Electrodes; Gas detectors; Gas insulation; Hydrogen; Metal-insulator structures; Temperature distribution; Temperature sensors; Threshold voltage; Hydrogen sensor; metal/insulator/semiconductor (MIS) structure; room-temperature measurement; solid electrolyte;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2006.881088
Filename :
1703486
Link To Document :
