Title :
155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators
Author :
Rosenbaum, Steven E. ; Kormanyos, Brian K. ; Jelloian, Linda M. ; Matloubian, Mehran ; Brown, April S. ; Larson, Lawrence E. ; Nguyen, Loi D. ; Thompson, Mark A. ; Katehi, Linda P B ; Rebeiz, Gabriel M.
Author_Institution :
Hughes Malibu Res. Lab., CA, USA
fDate :
4/1/1995 12:00:00 AM
Abstract :
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT´s. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 μm. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; electron beam lithography; gallium arsenide; indium compounds; integrated circuit technology; multiterminal networks; 0.25 micron; 155 GHz; 213 GHz; 50 nm; AlInAs-GaInAs-InP; HEMT MMIC oscillators; drain-source spacing; gate lengths; planar antennas; quasi-optical oscillators; self-aligned sub-tenth-micrometer electron-beam techniques; sheet charge; three-terminal oscillators; Fabrication; HEMTs; Indium phosphide; MMICs; Millimeter wave integrated circuits; Millimeter wave technology; Molecular beam epitaxial growth; Oscillators; Silicon; Space technology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
