Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

Author

Lee, Seok-Woon ; Joo, Seung-Ki

Author_Institution

Dept. of Metall. Eng., Seoul Nat. Univ., South Korea

Volume

17

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

160

Lastpage

162

Abstract

A new low temperature crystallization method for poly-Si TFTs was developed: Metal-Induced Lateral Crystallization (MILC). The a-Si film in the channel area of a TFT was laterally crystallized from the source/drain area, on which an ultrathin nickel layer was deposited before annealing. The a-channel poly-Si TFTs fabricated at 500/spl deg/C by MILC showed a mobility of 121 cm/sup 2//V/spl middot/s, a threshold voltage of 1.2 V, and an on/off current ratio of higher than 10/sup 6/. These electrical properties are much better than TFTs fabricated by conventional crystallization at 600/spl deg/C.

Keywords

annealing; carrier mobility; crystallisation; elemental semiconductors; semiconductor thin films; silicon; thin film transistors; 1.2 V; 500 degC; Si; annealing; channel area; electrical properties; metal-induced lateral crystallization; mobility; on/off current ratio; polysilicon thin-film transistor; threshold voltage; Crystallization; Fabrication; Liquid crystals; Microwave integrated circuits; Nickel; Plasma applications; Plasma chemistry; Substrates; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485160

Filename

485160