Title :
Measurement of a cross-section for single-event gate rupture in power MOSFETs
Author :
Mouret, I. ; Calvel, P. ; Allenspach, M. ; Titus, J.L. ; Wheatley, C.F. ; LaBel, K.A. ; Calvet, M.-C. ; Schrimpf, R.D. ; Galloway, K.F.
Author_Institution :
Arizona Univ., Tucson, AZ, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
The heavy-ion fluence required to induce Single-Event Gate Rupture (SEGR) in power MOSFETs is measured as a function of the drain bias, V/sub DS/, and as a function of the gate bias, V/sub GS/. These experiments reveal the abrupt nature of the SEGR-voltage threshold. In addition, the concepts of cross-section, threshold, and saturation in the SEGR phenomenon are introduced. This experimental technique provides a convenient method to quantify heavy-ion effects in power MOSFETs.
Keywords :
cosmic ray interactions; ion beam effects; ion beams; power MOSFET; semiconductor device reliability; semiconductor device testing; space vehicle electronics; cosmic ray environment; cross-section measurement; drain bias; gate bias; heavy-ion fluence; power MOSFET; saturation; single-event gate rupture; space applications; threshold; Cranes; Degradation; Electrodes; FETs; MOSFET circuits; NASA; Power MOSFET; Power measurement; Power transistors; Single event upset;
Journal_Title :
Electron Device Letters, IEEE
