Demonstration of npn InAs bipolar transistors with inverted base doping

Author

Dodd, Paul E. ; Lovejoy, Michael L. ; Lundstrom, Mark S. ; Melloch, Michael R. ; Woodall, Jerry M. ; Pettit, David

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

17

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

166

Lastpage

168

Abstract

We demonstrate np/sup +/n InAs bipolar transistors that operate under room temperature and cryogenic conditions. InAs transistors on an InP substrate were characterized as a function of temperature and exhibited good room temperature and low temperature common-emitter characteristics. Although the base doping density exceeded the emitter doping density by a factor of 20, current gains of 30 were achieved at room temperature. Junction leakage currents and contact resistance were identified as problems to address.

Keywords

III-V semiconductors; bipolar transistors; characteristics measurement; contact resistance; cryogenic electronics; doping profiles; indium compounds; leakage currents; semiconductor doping; InAs; base doping density; bipolar transistors; common-emitter characteristics; contact resistance; cryogenic conditions; current gains; emitter doping density; inverted base doping; junction leakage currents; room temperature conditions; Bipolar transistors; Cryogenics; Doping; HEMTs; Indium phosphide; Leakage current; MODFETs; Photonic band gap; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485162

Filename

485162