Title :
Scintillation Response Comparison Among Ce-Doped Aluminum Garnets, Perovskites and Orthosilicates
Author :
Mares, Jiri A. ; Nikl, Martin ; Mihokova, Eva ; Beitlerova, Alena ; Vedda, Anna ; Ambrosio, Carmelo D.
Author_Institution :
Inst. of Phys. AS CR, Prague
fDate :
6/1/2008 12:00:00 AM
Abstract :
This paper deals with some aspects of scintillation response of Ce-doped Y-Lu aluminum garnets or perovskites in comparison with Ce-doped orthosilicates. An essential difference between the Ce-doped aluminum garnets/perovskites and orthosilicates consists in larger fluctuations of photoelectron yield of the latter scintillators where differences can reach up to 50% and measured values critically depend on the recent history of the sample (illumination by day light, thermal annealing, etc.). This behavior of Ce-doped silicates seems to be due to the vicinity of the 5d1 level of Ce3+ from the conduction band, which makes the material more sensitive to the presence of deep electron traps monitored by thermo-luminescence above room temperature. The presence of such electron trapping sites thus appears more critical than in aluminum garnets/perovskites.
Keywords :
annealing; colour centres; conduction bands; doping; electron traps; lutetium compounds; photomultipliers; solid scintillation detectors; thermoluminescence; vacancies (crystal); yttrium compounds; Lu2SiO5:Ce; Lu3Al5O12:Ce; LuYSiO5:Ce; YAl5O12:Ce; cerium doped aluminum garnets; cerium doped perovskites; cerium-doped orthosilicates; colour centres; conduction band; deep electron traps; hybrid photomultiplier; illumination; oxygen vacancies; photoelectron yield fluctuations; scintillation response; scintillators; thermal annealing; thermoluminescence; Aluminum; Annealing; Conducting materials; Electron traps; Fluctuations; Garnets; History; Lighting; Monitoring; Temperature sensors; Ce-doping; Y-Lu aluminum garnets; hybrid photomultiplier; perovskites and orthosilicates; scintillation response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.922840