Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process

Author

Lu, Wei-Shin ; Hwu, Jenn-Gwo

Author_Institution

Nat. Taiwan Univ., Taipei, Taiwan

Volume

17

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

172

Lastpage

174

Abstract

A reliable fluorinated thin gate oxide prepared by liquid phase deposition (LPD) following rapid thermal oxidation (RTO) in O/sub 2/ or nitridation (RTN) in N/sub 2/O ambient was reported. Fluorine (F) atoms incorporated into the oxides during LPD process are found to be helpful to the improvement of oxide quality. It is observed that these fluorinated gate oxides show good properties in radiation hardness, charge to breakdown (Q/sub bd/), and oxide breakdown field (E/sub ox/) endurances. Interestingly, the Q/sub bd/´s for the fluorinated gate oxides are 10 times larger than those for the gate oxides prepared by RTO in O/sub 2/ or RTN in N/sub 2/O directly. Some of the E/sub ox/´s are even higher than 17 MV/cm for the samples investigated in this work.

Keywords

MOS capacitors; MOSFET; coating techniques; dielectric thin films; electric breakdown; nitridation; oxidation; radiation hardening (electronics); rapid thermal processing; semiconductor device reliability; MOSFETs; N/sub 2/O; O/sub 2/; charge to breakdown; fluorinated thin gate oxides; liquid phase deposition; nitridation; oxide breakdown field; oxide quality; radiation hardness; rapid thermal process; Atomic layer deposition; Atomic measurements; Design for quality; Electric breakdown; Hot carriers; Large scale integration; Oxidation; Rapid thermal processing; Temperature; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485164

Filename

485164