A novel method for extracting the metallurgical channel length of MOSFETs using a single device

A new charge-pumping method with dc source/drain biases and specified gate waveforms is proposed to extract the metallurgical channel length of MOSFETs by using a single device. Using two charge-pumping currents of a single nMOSFET measured under different V/sub GL/ (V/sub GH/ for pMOSFETs), the metallurgical channel length can be easily extracted with an accuracy of 0.02 μm. It is shown that the proposed novel method is self-consistent with the results obtained by the charge-pumping current measured from multidevices under different gate pulse waveforms and bias conditions.