DocumentCode :
757896
Title :
Static energy reduction techniques for microprocessor caches
Author :
Hanson, Heather ; Hrishikesh, M.S. ; Agarwal, Vikas ; Keckler, Stephen W. ; Burger, Doug
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Texas, Austin, TX, USA
Volume :
11
Issue :
3
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
303
Lastpage :
313
Abstract :
Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of static energy consumption due to subthreshold leakage current in cache memory arrays. This paper compares three techniques for reducing static energy consumption in on-chip level-1 and level-2 caches. One technique employs low-leakage transistors in the memory cell. Another technique, power supply switching, can be used to turn off memory cells and discard their contents. A third alternative is dynamic threshold modulation, which places memory cells in a standby state that preserves cell contents. In our experiments, we explore the energy and performance tradeoffs of these techniques. We also investigate the sensitivity of microprocessor performance and energy consumption to additional cache latency caused by leakage-reduction techniques.
Keywords :
cache storage; leakage currents; low-power electronics; microprocessor chips; cache latency; cache memory array; dynamic threshold modulation; low-leakage transistor; low-power design; memory cell; microprocessor cache; on-chip cache; power supply switching; static energy consumption; subthreshold leakage current; Cache memory; Circuits; Energy consumption; Leakage current; Microprocessors; Performance gain; Power supplies; Random access memory; Subthreshold current; Threshold voltage;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2003.812370
Filename :
1218205
Link To Document :
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