DocumentCode
758004
Title
Hot hole induced interface state generation and annihilation in SOI MOSFETs
Author
Sinha, Shankar P. ; Zaleski, Andrzej ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.
Author_Institution
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Volume
17
Issue
3
fYear
1996
fDate
3/1/1996 12:00:00 AM
Firstpage
121
Lastpage
123
Abstract
The effects of pure hot hole injection in SOI MOSFET´s are investigated. Pure hot hole injection is achieved by exploiting the opposite channel based carrier injection phenomenon. It is found that significant amounts of interface states are generated, some of which are annihilated by a subsequent hot electron injection pulse. A power law of the form D/sub it/(t)=Kt/sup n/ with n close to 0.25 was obtained, indicating a more complex, diffusion limited, electrochemical reaction at the interface than previously reported.
Keywords
MOSFET; hot carriers; interface states; silicon-on-insulator; SOI MOSFETs; diffusion limited electrochemical reaction; hot hole injection; interface states; Charge measurement; Charge pumps; Current measurement; Degradation; Hot carriers; Interface states; MOSFET circuits; Pulse generation; Secondary generated hot electron injection; Semiconductor films;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.485187
Filename
485187
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