InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices

Author

Chen, Kevin J. ; Maezawa, Koichi ; Yamamoto, Masafumi

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

127

Lastpage

129

Abstract

MOBILEs (monostable-bistable transition logic elements), which have the advantages of multiple-input and multiple-function, are demonstrated in InP-based material system using monolithic integration of resonant-tunneling diodes and high electron mobility transistors. The high peak current density, high peak-to-valley ratio, and high transconductance, which are required for high-performance MOBILEs, are demonstrated in this InP-based material system. A fabricated MOBILE with three-input gates having 1:2:4 width ratio can perform weighted-sum threshold logic operation, and has a wide range of applications in new computing architectures, such as neural networks.

Keywords

III-V semiconductors; field effect logic circuits; flip-flops; indium compounds; multivalued logic circuits; resonant tunnelling devices; InP; MOBILEs; computing architectures; high electron mobility transistors; integrated multiple-input resonant-tunneling devices; monolithic integration; monostable-bistable transition logic elements; peak current density; peak-to-valley ratio; three-input gates; transconductance; weighted-sum threshold logic operation; width ratio; Computer applications; Current density; Diodes; HEMTs; Logic; MODFETs; Mobile computing; Monolithic integrated circuits; Resonant tunneling devices; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485189

Filename

485189