Title :
A high-current and high-temperature 6H-SiC thyristor
Author :
Xie, K. ; Zhao, J.H. ; Flemish, J.R. ; Burke, T. ; Buchwald, W.R. ; Lorenzo, G. ; Singh, H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm/sup 2/ have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300/spl deg/C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities.
Keywords :
contact resistance; current density; silicon compounds; thyristors; wide band gap semiconductors; 100 V; 100 ns; 20 to 300 C; 43 ns; 6H-SiC thyristor; SiC; anode ohmic contact resistance; device forward drop; forward breakover voltage; high current densities; high-current thyristor; high-temperature operation; pulse gate triggering; pulse switched current density; Anodes; Current density; Etching; FETs; Laboratories; Silicon carbide; Temperature; Thermal conductivity; Thyristors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
