Title :
Spectral perturbation and mode suppression in 1.3 μm Fabry-Perot lasers
Author :
Young, J.S. ; Kozlowski, D.A. ; England, J.M.C. ; Plumb, R.G.S.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
2/16/1995 12:00:00 AM
Abstract :
Simulated defects, involving reflections and nonradiative recombination, have been introduced into conventional 1.3 μm Fabry-Perot lasers by bombarding them with a focused Ga+ ion beam. Very large spectral changes have resulted, in some cases resulting in singlemode operation with 40 dB suppression ratio, while threshold currents increased by a few milliamps. The spectral modulation is related to the position of etching relative to the nearest facet
Keywords :
focused ion beam technology; ion beam effects; laser modes; laser transitions; semiconductor lasers; sputter etching; 1.3 micron; FIB etching; Fabry-Perot lasers; Ga; etching position; focused Ga+ ion beam; mode suppression; nonradiative recombination; reflections; simulated defects; singlemode operation; spectral modulation; spectral perturbation; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950175
