Title :
Surface Passivation Effect on CZT-Metal Contact
Author :
Park, S.H. ; Ha, J.H. ; Cho, Y.H. ; Kim, H.S. ; Kang, S.M. ; Kim, Y.K. ; Kim, J.K.
Author_Institution :
Korea Atomic Energy Res. Inst., Daejeon
fDate :
6/1/2008 12:00:00 AM
Abstract :
The process of cadmium zinc telluride (CZT) surface passivation is very important to reduce the leakage current of the detector and to improve the detector performance. NH4/H2O2 solution was identified as an effective passivation agent for CZT. We fabricated a CZT planar detector and measured the detector performances before and after the NH4/H2O2 passivation. For the first time, the passivation effect on CZT-metal contact was measured. The depth profile of the chemical composition of metal contact was measured with AES to understand the change of the CZT detector performance with passivation.
Keywords :
II-VI semiconductors; cadmium compounds; leakage currents; passivation; semiconductor counters; semiconductor-metal boundaries; zinc compounds; CZT planar detector; CZT-metal contact; CdZnTe; NH4-H2O2 solution; cadmium zinc telluride; leakage current; surface passivation effect; Chemicals; Conductivity; Detectors; Leak detection; Leakage current; Passivation; Power engineering and energy; Sputter etching; Surface treatment; Zinc compounds; Cadmium zinc telluride (CZT); leakage current; metal-semiconductor contact; surface passivation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.914934
