DocumentCode :
758257
Title :
Potential Drops in Metal-Dielectric-Semiconductor Capacitors
Author :
Jordan, Angel G.
Volume :
8
Issue :
4
fYear :
1965
Firstpage :
131
Lastpage :
136
Abstract :
During the past few years many of the recent developments in the semiconductor devices field have found their way to the classroom through the collaboration of a handful of well-written books and tutorial papers. However, the electrical engineering student at junior and senior level is usually confused when exposed to subjects where voltage drops in semiconductor structures are involved. Two years ago, the author and collaborators wrote a note concerning potentials in semiconductor structures with added carriers. The approach and language used in that tutorial presentation aroused interest among colleagues in the teaching profession. The same approach and language are used in this paper to discuss potential drops in Metal-Dielectric-Semiconductor capacitors. These devices have excited considerable interest recently and may well be incorporated as subject material in an undergraduate curriculum in electrical engineering.
Keywords :
Capacitance; Capacitors; Collaboration; Dielectrics; Education; Electrical engineering; Electrostatics; Semiconductor devices; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Education, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9359
Type :
jour
DOI :
10.1109/TE.1965.4321916
Filename :
4321916
Link To Document :
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