DocumentCode
758466
Title
Moderate kink effect in fully depleted thin-film SOI MOSFETs
Author
Balestra, F. ; Matsumoto, T. ; Tsuno, M. ; Nakabayashi, H. ; Inoue, Y. ; Koyanagi, M.
Author_Institution
Fac. of Eng., Tohoku Univ., Sendai, Japan
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
326
Lastpage
327
Abstract
Floating body effects are investigated in thin-film SOI MOSFETs. It is shown that a moderate kink effect can be obtained for fully depleted SOI devices with intermediate Si layer thicknesses. This moderate kink is due to the significant potential barrier height of the source/thin film diode, which can be modulated by the additional forward bias induced by the impact ionisation current, for these moderately fully depleted devices. Various substrate and body biases are applied in order to analyse the transition from partial depletion to strong full depletion regimes
Keywords
MOSFET; impact ionisation; silicon-on-insulator; thin film transistors; Si; body biases; floating body effects; forward bias; full depletion regime; fully depleted thin-film SOI MOSFETs; impact ionisation current; intermediate Si layer; moderate kink effect; partial depletion; potential barrier height; substrate biases;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950222
Filename
375827
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