Title :
Direct measurement of doping density and barrier lowering effect with bias in quantum wells
Author :
Xu, Y. ; Shakouri, A. ; Yariv, A. ; Krabach, T. ; Dejewski, S.
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
2/16/1995 12:00:00 AM
Abstract :
An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AlGaAs multiquantum-well infra-red photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; infrared detectors; semiconductor doping; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs; barrier lowering effect; bias; doping density; multiquantum-well infra-red photodetectors; quantum wells; thin-sheet semiconductor material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950180
