Title :
Anisotropic etching of WSi films on GaAs
Author :
Shul, R.J. ; Baca, A.G. ; Rieger, D.J. ; Howard, A.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
2/16/1995 12:00:00 AM
Abstract :
Anisotropic etching of tungsten silicide submicrometre features has been achieved with both electron cyclotron resonance (ECR) and reactive ion etch (RIE) systems using fluorine based plasmas. The processes are suitable for WSi Schottky gates for high-speed, high-power GaAs transistors. WSi gate sidewall profiles, etch rates, and selectivity to photoresist are evaluated as a function of DC bias
Keywords :
Schottky gate field effect transistors; gallium arsenide; metallic thin films; semiconductor device metallisation; sputter etching; tungsten compounds; DC bias; ECR systems; MESFET fabrication; RIE systems; Schottky gates; WSi; WSi films; WSi-GaAs; anisotropic etching; electron cyclotron resonance; etch rates; fluorine based plasmas; high-power GaAs transistors; high-speed GaAs transistors; photoresist; reactive ion etch; selectivity; sidewall profiles; submicrometre features;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950213
