Title :
High extinction ratio GaAs/AlGaAs electroabsorption modulators integrated with passive waveguides using impurity-free vacancy diffusion
Author :
Cusumano, P. ; Krauss, T. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
2/16/1995 12:00:00 AM
Abstract :
Electroabsorption optical modulators integrated with passive waveguides have been fabricated on GaAs/AlGaAs multiquantum well material using the impurity-free vacancy diffusion technique with SrF 2 and SiO2 capping layers. At a wavelength of 861.6 nm, devices with a 400 μm long modulator section showed ON/OFF ratios greater than 35 dB for a reverse bias voltage of 3 V
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; integrated optics; optical fabrication; optical waveguides; 3 V; 861.6 nm; GaAs-AlGaAs; MQW; SiO2; SiO2 capping layer; SrF2; SrF2 capping layer; electroabsorption modulators; high extinction ratio; impurity-free vacancy diffusion; multiquantum well material; optical modulators; passive waveguides; reverse bias voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950169
