• DocumentCode
    758538
  • Title

    (GaAl)As SQW superluminescent diodes with extremely low coherence length

  • Author

    Semenov, A.T. ; Batovrin, V.K. ; Garmash, L.A. ; Shidlovsky, V.R. ; Shramenko, M.V. ; Yakubovich, S.D.

  • Author_Institution
    Superlum Ltd., Moscow, Russia
  • Volume
    31
  • Issue
    4
  • fYear
    1995
  • fDate
    2/16/1995 12:00:00 AM
  • Firstpage
    314
  • Lastpage
    315
  • Abstract
    Superluminescent diodes (SLDs) based on (AlGa)As single quantum well separate confinement heterostructures have been fabricated. The dependencies of their output power and spectrum on active channel length, pumping level and temperature were studied. Using combined pulsed/DC pumping an average spectrum width of 98 nm was obtained. A visibility function FWHM of 5.5 μm and 1/e2 width of 9.5 μm were recorded
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; superluminescent diodes; 820 nm; AlGaAs; SQW SCH type; SQW superluminescent diodes; active channel length; combined pulsed/DC pumping; low coherence length; output power; pumping level; separate confinement heterostructures; single quantum well; temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950214
  • Filename
    375835