DocumentCode
758538
Title
(GaAl)As SQW superluminescent diodes with extremely low coherence length
Author
Semenov, A.T. ; Batovrin, V.K. ; Garmash, L.A. ; Shidlovsky, V.R. ; Shramenko, M.V. ; Yakubovich, S.D.
Author_Institution
Superlum Ltd., Moscow, Russia
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
314
Lastpage
315
Abstract
Superluminescent diodes (SLDs) based on (AlGa)As single quantum well separate confinement heterostructures have been fabricated. The dependencies of their output power and spectrum on active channel length, pumping level and temperature were studied. Using combined pulsed/DC pumping an average spectrum width of 98 nm was obtained. A visibility function FWHM of 5.5 μm and 1/e2 width of 9.5 μm were recorded
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; superluminescent diodes; 820 nm; AlGaAs; SQW SCH type; SQW superluminescent diodes; active channel length; combined pulsed/DC pumping; low coherence length; output power; pumping level; separate confinement heterostructures; single quantum well; temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950214
Filename
375835
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