• DocumentCode
    758571
  • Title

    BJT-FET comparison: a new FET model

  • Author

    Hassul, Michael

  • Author_Institution
    Dept. of Electr. Eng., California State Univ., Long Beach, CA, USA
  • Volume
    39
  • Issue
    1
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    92
  • Lastpage
    94
  • Abstract
    A new AC model for the field effect transistor (FET) is presented. This model allows direct comparison between bipolar junction transistor (BJT) and FET amplifier circuits
  • Keywords
    amplifiers; bipolar transistors; field effect transistors; semiconductor device models; AC model; FET model; amplifier circuits; bipolar junction transistor; direct comparison; field effect transistor; Application software; Bipolar transistor circuits; Computer graphics; Computer vision; Differential amplifiers; Equations; FETs; Hardware; Joining processes; Robot programming;
  • fLanguage
    English
  • Journal_Title
    Education, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9359
  • Type

    jour

  • DOI
    10.1109/13.485239
  • Filename
    485239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=758571