Title :
BJT-FET comparison: a new FET model
Author_Institution :
Dept. of Electr. Eng., California State Univ., Long Beach, CA, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
A new AC model for the field effect transistor (FET) is presented. This model allows direct comparison between bipolar junction transistor (BJT) and FET amplifier circuits
Keywords :
amplifiers; bipolar transistors; field effect transistors; semiconductor device models; AC model; FET model; amplifier circuits; bipolar junction transistor; direct comparison; field effect transistor; Application software; Bipolar transistor circuits; Computer graphics; Computer vision; Differential amplifiers; Equations; FETs; Hardware; Joining processes; Robot programming;
Journal_Title :
Education, IEEE Transactions on
