Title :
Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers
Author :
Chen, T.R. ; Zhao, B. ; Eng, L. ; Feng, J. ; Zhuang, Y.H. ; Yariv, A.
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
fDate :
2/16/1995 12:00:00 AM
Abstract :
Record low CW threshold currents of 16 μA at room temperature and 21 μA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; quantum well lasers; reflectivity; 16 to 21 muA; CW threshold currents; InGaAs-AlGaAs; SQW lasers; buried heterostructure strained layer; cavity length; cryogenic temperature; high reflectivity coatings; mirror reflectivity; quantum well lasers; room temperature; single quantum well; ultralow threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950176
