DocumentCode
758604
Title
Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors
Author
Ng, C.H. ; Chew, K.W. ; Chu, S.-F.
Author_Institution
Mixed Signal Group, Chartered Semicond. Manuf. Ltd., Singapore, Singapore
Volume
24
Issue
8
fYear
2003
Firstpage
506
Lastpage
508
Abstract
In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.
Keywords
MIM structures; capacitors; leakage currents; plasma CVD; semiconductor device breakdown; MIM capacitors; PECVD; SiN; SiON; breakdown field strength; dispersive behavior; electrical characteristic; leakage; linearity; quality factor; Capacitance; Dielectrics; Electric breakdown; Linearity; MIM capacitors; Q factor; Radio frequency; Semiconductor films; Silicon compounds; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.815154
Filename
1218656
Link To Document