A model for μ-power rectifier analysis and design

Author

Curty, Jari-Pascal ; Joehl, Norbert ; Krummenacher, François ; Dehollain, Catherine ; Declercq, Michel J.

Author_Institution

Electron. Labs., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

52

Issue

12

fYear

2005

Firstpage

2771

Lastpage

2779

Abstract

This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at low power levels where the diodes are operating near their threshold voltage. The output electrical behavior of the rectifier is calculated as a function of the received power and the antenna parameters. Moreover, the two-port parameter values are computed for particular input voltages and output currents for the complete N-stage rectifier circuit using only the measured I-V and C-V characteristics of a single diode. To validate the model a three-stage modified-Greinacher full-wave rectifier was realized in an silicon-on-sapphire (SOS) CMOS 0.5-μm technology. The measurements are in excellent agreement with the values calculated using the presented model.

Keywords

CMOS integrated circuits; integrated circuit design; integrated circuit modelling; rectifying circuits; two-port networks; μ power rectifier analysis; 0.5 micron; CMOS technology; N stage rectifier circuit; modified Greinacher full wave rectifier; silicon on sapphire; Antenna measurements; CMOS technology; Circuits; Current measurement; Diodes; Particle measurements; Receiving antennas; Rectifiers; Semiconductor device modeling; Threshold voltage; Micropower; model; rectenna; rectifier; wireless power transmission;

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2005.854294

Filename

1556784