Title :
A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure
Author :
Yuen, Kam Hung ; Man, Tsz Yin ; Chan, Alain C K ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
A novel 2-bit/cell nonvolatile memory (NVM) with metal-oxide-nitride-oxide-semiconductor (MONOS) asymmetric double gate (ADG) MOSFET structure is proposed. With the double gate structure, the two conducting channels provide the ability to store 2 bits in a cell. Program and erase can be performed by channel hot electron (CHE) injection and Fowler-Nordheim (FN) tunneling respectively. The read operation and the array structure of the proposed novel NVM are also studied and described in this paper.
Keywords :
MOS memory circuits; MOSFET; flash memories; hot carriers; tunnelling; 2 bit; Fowler-Nordheim tunneling; MONOS nonvolatile memory cell; array structure; asymmetric double gate MOSFET; channel hot electron injection; flash memory; multibit storage; Channel hot electron injection; Fabrication; Flash memory cells; Logic devices; Logic programming; MONOS devices; MOSFET circuits; Nonvolatile memory; Silicon; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.815157
